IXYH20N65C3D1

Overview

The IXYH20N65C3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to optimize switching performance and conduction losses. The device features a TO-247AD-3 through-hole package, suitable for high-power applications. Key electrical parameters include a maximum collector-emitter voltage of 650 V and a continuous collector current of 20 A at 25°C. The saturation voltage is typically 2.2 V at 20 A. It operates within a junction temperature range of -55°C to +175°C and has a power dissipation rating of 230 W.

Feature Summary

• Integrates XPT and GenX3 technologies for optimized trade-off between low conduction loss and fast switching speed.
• Designed with a robust TO-247AD-3 leaded package to support high thermal performance in demanding environments.
• Engineered for high reliability with a wide operating junction temperature range up to 175°C.

Applications

• High-frequency motor drives and servo amplifiers
• Switch-mode power supplies and DC-DC converters
• Industrial inverters and UPS systems

Procurement Notes

Verify the specific suffix D1 against official datasheets to confirm pinout and packaging variations. Ensure the supplier provides traceable documentation matching the IXYS manufacturer part number. Cross-reference technical specifications directly with the latest public component documents to avoid discrepancies from outdated distributor listings.

Selection Notes

Select this component when a 650V IGBT with moderate current handling is required for efficient power conversion. Compare the 2.2 V saturation voltage and switching characteristics against alternative devices in the same voltage class. Confirm that the TO-247AD-3 package fits the thermal management constraints of the target design.

Part Context

This part belongs to the IXYS IXYH series of XPT IGBTs, which are designed for medium-power applications. The series leverages advanced trench gate technology to reduce switching losses while maintaining low on-state voltage. It serves as a discrete solution for power stages where module integration is not feasible or cost-prohibitive.

Replacement Considerations

Publicly confirmed substitute part numbers for IXYH20N65C3D1 were not found in the provided source material. Verify compatibility with potential alternatives by matching voltage ratings, current capabilities, and package dimensions against official datasheets.