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The IXYH24N90C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX3 series and utilizes XPT technology for optimized performance in high-voltage applications. The device features a collector-emitter voltage rating of 900 V and a continuous collector current of 24 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.6 V, a gate-emitter voltage range of ±20 V, and a power dissipation capacity of 180 W. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247AD-3 through-hole package.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout configuration and thermal characteristics. Ensure that the procurement source provides valid traceability documentation consistent with IXYS quality standards. Cross-reference the component marking with the official part identification guide to prevent counterfeit substitution.
Select this component for designs requiring 900 V blocking capability with moderate current handling up to 24 A. The TO-247AD-3 package facilitates efficient heat sinking for power dissipation levels around 180 W. Consider the 2.6 V saturation voltage for conduction loss calculations in efficiency-critical circuits operating within the specified temperature range.
This IGBT is part of the IXYS GenX3 family, which integrates advanced trench gate technology with field-stop structures. The series targets medium-power applications where switching frequency and thermal management are critical constraints. It serves as a discrete alternative to modules in compact inverter designs.
Direct replacements must match the 900 V / 24 A rating and TO-247AD-3 package. Verify compatibility of gate threshold voltage and saturation voltage with existing driver circuits. Check if alternative packages require adapter modifications.