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The IXYH25N250CHV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features the High Voltage XPT (eXtended Plate Technology) architecture for optimized performance at high voltages. The device is housed in a TO-247HV package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 2500 V and a continuous collector current of 95 A at 25°C. The saturation voltage is specified at 3.4 V, with a power dissipation capability of 937 W. It operates within a temperature range of -55°C to +175°C.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Request official datasheets and test reports to confirm compliance with RoHS standards and specific electrical parameters. Ensure storage conditions respect humidity sensitivity levels to prevent degradation prior to installation.
Select this component for circuits demanding high blocking voltage and moderate current handling. Compare saturation voltage and thermal resistance against system requirements. Consider the TO-247HV package size for PCB layout constraints and heatsinking capabilities relative to the 937 W power dissipation rating.
This IGBT belongs to IXYS's High Voltage series, leveraging XPT technology for improved efficiency in high-voltage environments. It complements other devices in the lineup offering similar voltage ratings but varying current capacities and package styles, providing designers with options for different power density and thermal management needs.
Direct substitutes may include IXYT25N250CHV or IXYX25N250CV1 from the same manufacturer, provided pinout compatibility and electrical ratings match the application requirements. Verify package dimensions and thermal characteristics before substitution.