IXYH30N120A4

Overview

The IXYS IXYH30N120A4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing XPT and GenX4 technologies. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current of 55A at 25°C, with a maximum pulsed current of 165A. The device exhibits a low saturation voltage of 1.8V at 55A and a gate charge of 79nC. Designed for surface-mount applications in the TO-247-3 package, it supports a power dissipation of 650W and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Integrates XPT thin-wafer technology to achieve optimized low conduction losses and high power density.
• Employs GenX4 trench gate architecture to enable switching frequencies up to 5kHz while maintaining low drive requirements.
• Provides robust thermal performance and extended operating capability across a wide temperature range from -55°C to +175°C.

Applications

• Power inverters
• Motor drives
• PFC circuits
• Battery chargers
• Welding machines

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm technical specifications match the IXYH30N120A4 designation. Ensure packaging integrity and check for moisture sensitivity indicators prior to installation.

Selection Notes

Select this component for designs requiring surface-mount IGBTs with high efficiency and moderate current handling. Compare saturation voltage and gate charge against alternative packages like TO-247AD if lower thermal resistance is needed. Confirm that the TO-247-3 footprint aligns with the PCB layout constraints.

Part Context

This part belongs to the IXYS IXYxN120A4 series, representing fourth-generation XPT GenX4 IGBTs. These devices are engineered for high-performance power conversion, offering superior trade-offs between conduction and switching losses compared to previous generations.

Replacement Considerations

Direct replacements include other IXYS IXYH30N120 variants or equivalent 1200V/55A SMD IGBTs from manufacturers like Infineon or Mitsubishi, provided pinouts and thermal characteristics are compatible.

FAQ

What is the maximum switching frequency supported by the IXYH30N120A4?

The device supports switching frequencies up to 5kHz due to its GenX4 trench gate technology.

Does the IXYH30N120A4 support operation at elevated temperatures?

Yes, it is rated for a maximum junction temperature of +175°C.

What is the typical saturation voltage at rated current?

The saturation voltage is typically 1.8V when the collector current is 55A.