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Product Detailed Parameters
- Description：IGBT PT 650V 70A TO-247
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
- Power - Max：270 W
- Switching Energy：830µJ (on), 640µJ (off)
- Input Type：Standard
- Gate Charge：45 nC
- Td (on/off) @ 25°C：17ns/87ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：38 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXYH)
- Grade：-
- Qualification：-
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Overview
The IXYH30N65B3D1 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to optimize performance characteristics. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 70 A at 25°C, with a peak pulsed current rating of 160 A. The typical collector-emitter saturation voltage is 1.8 V. Power dissipation capacity reaches 270 W. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247-3 through-hole package.
Feature Summary
- Integrates IXYS XPT technology for enhanced short-circuit ruggedness and reduced tail current during switching.
- Employs GenX3 trench gate architecture to achieve low conduction losses and optimized switching behavior.
- Designed for high reliability with a maximum operating junction temperature of 175°C.
Applications
- High-frequency induction heating systems
- Switched-mode power supplies (SMPS)
- Motor control drives
Procurement Notes
Verify the specific ordering suffix against official IXYS documentation to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides valid traceability records. Confirm RoHS compliance status directly from the manufacturer's latest release notes before finalizing acquisition.
Selection Notes
Select this component when designing circuits requiring 650V blocking capability with moderate current handling up to 70A. The TO-247-3 package facilitates efficient heat sinking for through-hole mounting. Consider the 1.8V saturation voltage for efficiency calculations in hard-switching applications where low conduction loss is critical.
Part Context
This part belongs to the IXYS IXYH series of disc IGBTs. It represents an evolution in IXYS' discrete power semiconductor offerings, combining advanced trench gate structures with plasma texturing techniques. The series targets industrial applications demanding robust performance under high thermal stress conditions.
Replacement Considerations
Direct substitutes include IXYH40N65C3D1 and IXXH30N65B4D1. Verify parameter alignment regarding saturation voltage and thermal resistance before implementation.
FAQ
What is the maximum repetitive peak collector current for the IXYH30N65B3D1?
The maximum repetitive peak collector current is specified as 160 A.
Does the IXYH30N65B3D1 support surface mount installation?
No, the IXYH30N65B3D1 is designed for through-hole mounting using the TO-247-3 package.
What is the typical value for collector-emitter saturation voltage?
The typical collector-emitter saturation voltage is 1.8 V.
