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Product Detailed Parameters
- Description：IGBT PT 650V 60A TO-247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：118 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 30A
- Power - Max：270 W
- Switching Energy：1mJ (on), 270µJ (off)
- Input Type：Standard
- Gate Charge：44 nC
- Td (on/off) @ 25°C：21ns/75ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：120 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXTH)
- Grade：-
- Qualification：-
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Overview
The IXYH30N65C3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to optimize switching performance and conduction losses. The device features a TO-247AD-3 through-hole package, supporting screw mounting for robust thermal management. Key electrical parameters include a collector-emitter voltage of 650 V and a continuous collector current of 30 A at 25°C. The saturation voltage is specified at 1.8 V, with a maximum power dissipation of 750 W. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Integrates XPT technology for reduced forward voltage drop and improved short-circuit capability.
- Incorporates GenX3 architecture to enhance switching speed and reduce switching losses.
- Designed in a TO-247AD-3 package for high-power density and efficient heat dissipation.
Applications
- High-frequency power supplies
- Motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific suffix H1 against official datasheets to confirm pinout and packaging variations. Ensure compatibility with existing gate driver circuits regarding voltage thresholds. Confirm RoHS compliance status through manufacturer documentation before integration into regulated assemblies.
Selection Notes
Select this component for applications requiring high efficiency at moderate currents. Compare saturation voltage against switching loss requirements. Evaluate thermal resistance values relative to the intended heatsink design. Consider the 650V rating for standard industrial voltage levels.
Part Context
This part belongs to the IXYS IXYH series of discrete IGBTs. It shares the XPT and GenX3 technology platform with other models in the lineup. The series targets general-purpose industrial switching applications requiring reliable performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official replacement guides or technical support channels.
