IXYH40N120B3

$4.01

Description：IGBT 1200V 96A TO-247
Series：GenX3™, XPT™

SKU:709c530423da Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 96A TO-247
Series：GenX3™, XPT™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：96 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 40A
Power - Max：577 W
Switching Energy：2.7mJ (on), 1.6mJ (off)
Input Type：Standard
Gate Charge：87 nC
Td (on/off) @ 25°C：22ns/177ns
Test Condition：600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 (IXTH)
Grade：-
Qualification：-

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IXYH40N120B3

Overview

The IXYH40N120B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and features a TO-247-PLUS-3 through-hole package. The device has a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C, with a pulsed current rating of 96 A. Key electrical parameters include a saturation voltage of 2.8 V, a gate-emitter leakage current of 100 nA, and a power dissipation capacity of 577 W. It operates within a temperature range of -55°C to +175°C.

Feature Summary

High-voltage capability for robust power switching applications
Low saturation voltage for efficient conduction
Through-hole mounting for reliable thermal management

Applications

Motor drives and inverters
Uninterruptible power supplies (UPS)
Industrial welding equipment

Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm pinout compatibility and packaging type. Ensure that the procurement channel provides original manufacturer documentation to validate authenticity. Confirm that the component meets required environmental standards for the intended operating conditions.

Selection Notes

Select this component when a high-voltage, high-current discrete switch is required in a through-hole configuration. Consider the thermal resistance and package size constraints during design. Evaluate the trade-off between saturation voltage and switching speed for the specific application frequency requirements.

Part Context

This part belongs to the IXYS IGBT portfolio, designed for medium to high-power industrial applications. It represents a standard discrete solution compared to integrated modules, offering flexibility in circuit layout while maintaining high performance characteristics typical of the manufacturer's silicon-based power semiconductors.

Replacement Considerations

Cross-reference with other IXYS models in the same voltage and current class. Verify pinout compatibility and thermal characteristics before substitution.