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The IXYH40N120C4 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the GenX3 Trench IGBT family. The device features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 1.2 kV. At 25°C, it supports a continuous collector current of 120 A and a pulsed current of 240 A. The saturation voltage is specified at 2.5 V, with a power dissipation rating of 680 W. Operating temperatures range from -55°C to +175°C.
Verify component authenticity against official IXYS datasheets before integration. Confirm that the specific ordering suffix matches the required electrical parameters and packaging configuration. Ensure supply chain sources provide valid traceability documentation to mitigate counterfeiting risks during procurement.
Select this component when designing circuits requiring high-voltage switching with moderate frequency capabilities. The TO-247-3 package facilitates efficient thermal management via direct mounting. Evaluate gate drive requirements against the specified ±20 V limits to ensure reliable operation within the designated temperature range.
This device is part of the IXYS IXYH series, which focuses on high-efficiency power switching solutions. The series leverages advanced trench gate and field-stop technologies to minimize switching losses while maintaining robust avalanche ruggedness suitable for demanding industrial power electronics applications.
Direct functional substitutes include the IXYH40N120C3D1 and IXYH40N120C3. Verify pinout compatibility and thermal resistance specifications when transitioning between these variants to maintain circuit integrity.