IXYH40N90C3

Overview

The IXYH40N90C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing Silicon technology and XPT planar architecture. It is housed in a TO-247AD-3 through-hole package with a maximum collector-emitter voltage of 900 V and a continuous collector current of 105 A at 25°C. The device features a low saturation voltage of 2.2 V and supports a power dissipation of 600 W. Operating within a temperature range of -55°C to +175°C, it includes an integrated anti-parallel diode with a gate-emitter voltage limit of ±20 V.

Feature Summary

• XPT Planar Technology for optimized switching performance
• High thermal stability up to 175°C junction temperature
• Integrated fast recovery anti-parallel diode

Applications

• Industrial motor drives and inverters
• Uninterruptible Power Supply (UPS) systems
• High-frequency power supplies

Procurement Notes

Verify the specific manufacturer part number against official IXYS documentation to confirm authenticity. Ensure the component matches the TO-247AD-3 package style and GenX3 series designation. Cross-reference RoHS compliance details directly from the datasheet rather than relying on distributor summaries.

Selection Notes

Select this component when a 900V blocking capability is required alongside high current handling. The TO-247AD-3 package facilitates efficient heat sinking for high-power applications. Verify that the system's thermal management can support the specified 600W power dissipation rating under operating conditions.

Part Context

This IGBT belongs to the IXYS GenX3 product family, which utilizes advanced XPT (eXtended Plateau Technology) to reduce saturation voltage while maintaining robust short-circuit withstand capabilities. The TO-247AD-3 package provides a standardized footprint for industrial power electronics designs requiring reliable high-voltage switching.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.