IXYH50N65C3D1

Overview

The IXYH50N65C3D1 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS XPT-GenX3 series. It features a TO-247AD-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 750 W. It operates within a temperature range of -55°C to +175°C.

Feature Summary

• Utilizes XPT technology to optimize the trade-off between conduction losses and switching performance.
• Incorporates GenX3 architecture to enhance ruggedness and reduce tail current during turn-off.
• Designed for high-power density applications requiring low on-state voltage drop.

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency welding inverters

Procurement Notes

Verify the specific suffix D1 against official datasheets to confirm pinout and thermal characteristics match the design requirements. Ensure the supplier provides valid traceability documentation. Confirm RoHS compliance status directly with the manufacturer or authorized distributor records prior to ordering.

Selection Notes

Select this component when a 650V rating is required with moderate current handling capabilities. The TO-247AD package facilitates efficient heat sinking for high-power modules. Compare the 1.8 V saturation voltage against system efficiency targets. Evaluate the 750 W power dissipation limit against the expected thermal management solution in the final assembly.

Part Context

This part belongs to the IXYS IXYH50N65 family, which utilizes advanced trench gate and field-stop technologies. The XPT process specifically targets reduced switching energy while maintaining low conduction losses. The GenX3 generation improves short-circuit withstand capability compared to previous iterations.

Replacement Considerations

Direct replacements must maintain the 650V/50A specification and TO-247AD footprint. Verify that alternative devices offer comparable saturation voltage and switching times to ensure circuit compatibility without redesigning the gate drive network.