IXYH55N120A4

Overview

The IXYH55N120A4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT Gen 4 Trench technology and is housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 175 A at 25°C, with a peak pulsed current rating of 350 A. It features a typical collector-emitter saturation voltage of 1.8 V and a power dissipation capacity of 650 W. The component operates within a temperature range of -55°C to +175°C and includes a gate-emitter leakage current of 100 nA.

Feature Summary

• Incorporates XPT Gen 4 Trench technology for optimized switching performance and reduced conduction losses.
• Designed for high-voltage applications with a robust 1.2 kV blocking capability.
• Utilizes a TO-247-3 package suitable for high-power thermal management.

Applications

• High-frequency power supplies
• Motor control systems
• Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Ensure that the ordering suffix matches the required packaging configuration. Confirm that the component meets all relevant safety standards for the intended industrial application environment.

Selection Notes

Select this component for designs requiring high voltage tolerance and moderate current handling in a standard through-hole format. Compare the 1.8 V saturation voltage against alternative devices to ensure efficiency targets are met. Verify that the thermal resistance characteristics align with the system's heat sinking capabilities for reliable operation at elevated temperatures.

Part Context

This IGBT belongs to the IXYS XPT Gen 4 series, which integrates trench gate technology with field-stop structures. This generation aims to balance low conduction losses with fast switching speeds. The TO-247-3 package provides a standardized footprint for mounting on heatsinks in various power electronic modules.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official cross-reference lists from IXYS or equivalent manufacturers when identifying compatible alternatives for design updates.