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Product Detailed Parameters
- Description：IGBT TRENCH 1200V 126A TO-247
- Series：XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：126 A
- Current - Collector Pulsed (Icm)：290 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 55A
- Power - Max：650 W
- Switching Energy：3.5mJ (on), 1.34mJ (off)
- Input Type：Standard
- Gate Charge：114 nC
- Td (on/off) @ 25°C：20ns/180ns
- Test Condition：600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：180 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXTH)
- Grade：-
- Qualification：-
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Overview
The IXYS IXYH55N120C4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing XPT thin-wafer technology and Gen 4 Trench architecture. It features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 55 A at 25°C. The device exhibits a typical saturation voltage of 2.5 V, power dissipation of 650 W, and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- XPT thin-wafer technology for optimized trade-off between conduction and switching losses
- Gen 4 Trench gate structure providing low on-state voltage
- Square Reverse Bias Safe Operating Area (RBSOA)
- Designed for high-frequency applications up to 50 kHz
Applications
- High-frequency inverters
- Uninterruptible Power Supplies (UPS)
- Induction heating systems
- Switched-mode power supplies
Procurement Notes
Verify the specific suffix 'H1' against the official Littelfuse/IXYS datasheet to confirm RoHS compliance status and exact dynamic electrical characteristics. Ensure the procurement channel provides the original manufacturer documentation rather than generic distributor summaries to validate the component's authenticity and technical specifications.
Selection Notes
Select this component when designing circuits requiring high-voltage blocking capability combined with moderate current handling in a standard through-hole package. The 1200V rating suits industrial and grid-connected applications, while the 55A limit defines the thermal management requirements for the chosen heatsink configuration.
Part Context
This part belongs to the IXYS XPT Gen 4 family of trench-gate IGBTs. These devices are engineered to balance low saturation voltage with fast switching speeds, making them suitable for modern power electronics where efficiency and compact thermal design are critical constraints.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting the official Littelfuse/IXYS replacement guide or contacting the manufacturer directly for qualified alternatives.
