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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 134A TO-247
- Series：Gen5 XPT™
- Mfr：IXYS
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：134 A
- Current - Collector Pulsed (Icm)：260 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 36A
- Power - Max：395 W
- Switching Energy：600µJ (on), 1.45mJ (off)
- Input Type：Standard
- Gate Charge：128 nC
- Td (on/off) @ 25°C：28ns/230ns
- Test Condition：400V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXYH)
- Grade：-
- Qualification：-
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Overview
The IXYH60N65A5 is a single N-channel Silicon IGBT from the Gen5 XPT™ series, packaged in TO-247(IXYH). It features a collector-emitter breakdown voltage (VCES) of 650 V and a continuous collector current (IC110) of 60 A at 110 °C. The device exhibits a maximum saturation voltage (VCE(sat)) of 1.35 V at 36 A and 15 V gate drive. Key dynamic parameters include a total gate charge (Qg) of 128 nC, turn-on energy (Eon) of 0.60 mJ, and turn-off energy (Eoff) of 1.45 mJ under standard test conditions.
Feature Summary
- Utilizes proprietary XPT™ thin-wafer technology combined with Trench IGBT process for optimized performance.
- Designed for low conduction losses and reduced thermal resistance to enhance efficiency.
- Features low gate charge requirements to minimize gate drive power consumption.
- Provides high surge current capability and a square Reverse Biased Safe Operating Area (RBSOA).
Applications
- Power Inverters
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC) Circuits
- Battery Chargers
- Welding Machines
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status and package integrity upon receipt. Ensure storage conditions remain within specified limits to prevent moisture damage prior to soldering. Cross-reference ordering information with authorized distributors to avoid counterfeit products.
Selection Notes
Select this component for applications requiring efficient switching up to 5 kHz with moderate current demands. Evaluate thermal management requirements based on the junction-to-case thermal resistance of 0.38 K/W. Ensure the gate drive circuit can supply the necessary 15 V level to achieve optimal saturation voltage characteristics during operation.
Part Context
This discrete IGBT belongs to IXYS' Gen5 XPT™ family, engineered for improved switching performance compared to previous generations. The TO-247(IXYH) package provides an international standard footprint suitable for through-hole mounting. It serves as a core switching element in medium-power conversion systems where reliability and thermal stability are critical.
Replacement Considerations
Direct substitutes must match the 650 V rating, TO-247(IXYH) package, and similar electrical characteristics. Verify pinout compatibility and thermal resistance values before implementation.
