IXYH60N90C3

Overview

The IXYH60N90C3 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series, utilizing XPT technology. It features a TO-247AD-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 900 V and delivers a continuous collector current of 140 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.9 V and a gate-emitter voltage range of -20 V to +20 V. Power dissipation reaches 750 W, with an operating temperature range spanning from -55°C to +175°C.

Feature Summary

• Integrates IXYS GenX3 planar trench gate technology combined with XPT (eXtended Plateau Technology) to optimize switching performance and conduction losses.
• Features a rugged TO-247AD-3 leaded package engineered for high-power thermal management and reliable through-hole PCB integration.
• Capable of sustained operation at elevated junction temperatures up to 175°C, providing robustness for demanding industrial environments.

Applications

• High-frequency induction heating systems
• Switch-mode power supplies (SMPS)
• Motor drive inverters

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status via the supplier's documentation. Ensure the TO-247AD-3 package matches design requirements. Validate that the specific batch meets the required electrical thresholds for VCEO and Ic before final assembly.

Selection Notes

Select this component when a 900V blocking capability is required alongside high current handling. The 140A rating suits applications needing substantial power throughput. Consider the 2.9V saturation voltage for efficiency calculations in low-voltage drop scenarios. The wide thermal range allows flexibility in cooling system design compared to lower-rated alternatives.

Part Context

This part belongs to the IXYS IXYH series, which focuses on high-voltage IGBT solutions. The '60' indicates the current class variant within the 900V family. It utilizes the standard TO-247AD-3 form factor common in power electronics, distinguishing it from module-based or surface-mount variants in the broader portfolio.

Replacement Considerations

Direct substitutes must match the 900V VCEO, 140A Ic, and TO-247AD-3 package. Verify pinout compatibility and thermal resistance characteristics. Cross-reference switching times and saturation voltages to ensure circuit performance remains within acceptable limits during replacement.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 900 V.

Does this component support high-temperature operation?

Yes, the maximum operating temperature is specified as +175°C.

What packaging style is used for this IGBT?

It uses the TO-247AD-3 package designed for through-hole installation.