IXYH85N120A4

$18.02

Description：IGBT PT 1200V 300A TO-247
Series：-

SKU:c75f11c5ce97 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 300A TO-247
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：300 A
Current - Collector Pulsed (Icm)：520 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 85A
Power - Max：1150 W
Switching Energy：4.9mJ (on), 8.3mJ (off)
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：40ns/400ns
Test Condition：600V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr)：40 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 (IXTH)
Grade：-
Qualification：-

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IXYH85N120A4

Overview

The IXYH85N120A4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT Gen 4 technology and features a Trench gate architecture within a TO-247-3 package. The device supports a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 85 A. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.5 V, a power dissipation rating of 1.15 kW at 25°C, and a gate-emitter voltage range of -20 V to +20 V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Integrates XPT thin wafer technology for optimized trade-off between conduction losses and switching performance.
Employs Trench gate architecture to achieve low on-state voltage drop and high efficiency.
Designed with robust short-circuit withstand capability suitable for demanding industrial environments.

Applications

Industrial motor drives and variable frequency drives
High-frequency power supplies and inverters
Welding equipment and UPS systems

Procurement Notes

Verify the specific ordering suffix against official IXYS documentation to ensure correct pin configuration and thermal characteristics. Confirm RoHS compliance status through the manufacturer's datasheet or certified component lists prior to integration into production workflows.

Selection Notes

Select this component for applications requiring high blocking voltage and moderate current handling in compact packages. Evaluate thermal management requirements based on the specified power dissipation limits and ensure gate drive circuits accommodate the recommended voltage levels for optimal switching behavior.

Part Context

This discrete IGBT belongs to IXYS' GenX4 product line, which represents advanced silicon power semiconductor solutions. The series targets high-efficiency power conversion systems, leveraging proprietary trench and field-stop technologies to enhance performance density compared to previous generations.

Replacement Considerations

Direct substitutes include the IXYH55N120A4 from the same manufacturer family. Cross-reference technical specifications such as current ratings and package dimensions when evaluating alternative sources or equivalent components from other vendors.