IXYH85N120C4

Overview

The IXYH85N120C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the fourth generation of Trench IGBTs. The device features a TO-247-3 through-hole package designed for high-power applications. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 85 A at 25°C. The saturation voltage (Vce(sat)) is typically 2.5 V, with a maximum power dissipation (Pd) of 650 W. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Incorporates XPT thin-wafer technology for optimized trade-off between conduction losses and switching performance.
• Utilizes fourth-generation Trench gate architecture to achieve low saturation voltage and improved switching characteristics.
• Designed for robust operation in high-voltage environments with a 1200 V blocking capability.

Applications

• High-frequency power supplies
• Uninterruptible Power Supply (UPS) systems
• Industrial motor drives

Procurement Notes

Verify the specific manufacturer datasheet for the IXYH85N120C4 to confirm current availability and exact parameter tolerances. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference the part number against official IXYS documentation to validate technical specifications before procurement.

Selection Notes

Select this component for designs requiring high voltage isolation and moderate current handling in a standard through-hole package. Compare the 85 A continuous current rating and 1200 V breakdown voltage against circuit requirements. Evaluate thermal management needs based on the 650 W power dissipation limit and the specific saturation voltage characteristics.

Part Context

This component is part of the IXYS IXYH series, which focuses on high-performance discrete IGBTs. The series leverages advanced silicon planar technology to deliver reliability in demanding power electronics applications. The IXYH85N120C4 specifically targets markets needing efficient switching solutions with established package compatibility.

Replacement Considerations

Consult official IXYS substitution guides or distributor cross-reference tools for verified equivalent parts. Do not assume functional interchangeability with other 1200 V IGBTs without verifying pinout, thermal resistance, and electrical limits.