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The IXYH8N250CHV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 2500 V and a continuous collector current of 29 A at 25°C. Key electrical parameters include a saturation voltage of 4 V at 15 V gate drive and 8 A collector current, with a maximum power dissipation of 280 W. The component operates within a temperature range of -55°C to +175°C junction temperature.
Verify the specific suffix 'CHV' against official IXYS documentation to confirm exact binning or testing variations. Ensure compatibility with standard TO-247 footprints during PCB layout. Confirm RoHS compliance status via the manufacturer's latest environmental declaration before final procurement approval.
Select this component when a 2500 V rating is required for high-voltage isolation. The 29 A current capability suits moderate power levels where TO-247 packaging provides adequate heat sinking. Compare saturation voltage and switching energy metrics against alternative IGBTs to ensure efficiency targets are met in the specific circuit topology.
This part belongs to the IXYS High Voltage IGBT family, specifically utilizing XPT (eXtended Plate Technology). It shares the TO-247 form factor with other high-voltage devices like the IXYH8N250CV1HV but may differ in internal doping profiles or testing criteria defined by the CHV suffix.
Publicly confirmed substitute part numbers for the IXYH8N250CHV were not found in available verified sources. Cross-referencing with the base model IXYH8N250 series is recommended only if electrical parameters match exactly.
The maximum collector-emitter breakdown voltage is 2500 V.
The device operates within a junction temperature range of -55°C to +175°C.
The saturation voltage is specified as 4 V maximum at a gate-emitter voltage of 15 V and a collector current of 8 A.