IXYH8N250CHV

IXYH8N250CHV

$17.43
  • Description:IGBT 2500V 29A TO-247HV
  • Series:XPT™

SKU:635c966c3c00 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 2500V 29A TO-247HV
  • Series:XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):2500 V
  • Current - Collector (Ic) (Max):29 A
  • Current - Collector Pulsed (Icm):70 A
  • Vce(on) (Max) @ Vge, Ic:4V @ 15V, 8A
  • Power - Max:280 W
  • Switching Energy:2.6mJ (on), 1.07mJ (off)
  • Input Type:Standard
  • Gate Charge:45 nC
  • Td (on/off) @ 25°C:11ns/180ns
  • Test Condition:1250V, 8A, 15Ohm, 15V
  • Reverse Recovery Time (trr):5 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Variant
  • Supplier Device Package:TO-247HV
  • Grade:-
  • Qualification:-

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IXYH8N250CHV

Overview

The IXYH8N250CHV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 2500 V and a continuous collector current of 29 A at 25°C. Key electrical parameters include a saturation voltage of 4 V at 15 V gate drive and 8 A collector current, with a maximum power dissipation of 280 W. The component operates within a temperature range of -55°C to +175°C junction temperature.

Feature Summary

  • High Voltage XPT Technology for optimized switching performance
  • Single configuration suitable for high-power applications
  • Through-hole mounting for robust thermal management

Applications

  • Industrial motor drives
  • High-voltage power supplies
  • Inverter circuits

Procurement Notes

Verify the specific suffix 'CHV' against official IXYS documentation to confirm exact binning or testing variations. Ensure compatibility with standard TO-247 footprints during PCB layout. Confirm RoHS compliance status via the manufacturer's latest environmental declaration before final procurement approval.

Selection Notes

Select this component when a 2500 V rating is required for high-voltage isolation. The 29 A current capability suits moderate power levels where TO-247 packaging provides adequate heat sinking. Compare saturation voltage and switching energy metrics against alternative IGBTs to ensure efficiency targets are met in the specific circuit topology.

Part Context

This part belongs to the IXYS High Voltage IGBT family, specifically utilizing XPT (eXtended Plate Technology). It shares the TO-247 form factor with other high-voltage devices like the IXYH8N250CV1HV but may differ in internal doping profiles or testing criteria defined by the CHV suffix.

Replacement Considerations

Publicly confirmed substitute part numbers for the IXYH8N250CHV were not found in available verified sources. Cross-referencing with the base model IXYH8N250 series is recommended only if electrical parameters match exactly.

FAQ

What is the maximum collector-emitter voltage for the IXYH8N250CHV?

The maximum collector-emitter breakdown voltage is 2500 V.

What is the operating junction temperature range?

The device operates within a junction temperature range of -55°C to +175°C.

What is the typical saturation voltage at rated conditions?

The saturation voltage is specified as 4 V maximum at a gate-emitter voltage of 15 V and a collector current of 8 A.

IXYH8N250CHVIXYH8N250CHV
$17.43
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