IXYH8N250CV1HV

Overview

The IXYH8N250CV1HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology to achieve a collector-emitter breakdown voltage of 2500 V and a continuous collector current of 29 A at 25°C. The device features a maximum power dissipation of 280 W and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-247-3 through-hole housing, it exhibits a saturated collector-emitter voltage of 4 V at 8 A with a 15 V gate drive. Key switching parameters include a turn-on time of 11 ns, turn-off time of 180 ns, reverse recovery time of 5 ns, and a total gate charge of 45 nC.

Feature Summary

• XPT technology enables optimized trade-offs between blocking voltage capability and on-state saturation voltage for high-voltage applications.
• Integrated fast recovery characteristics with a short reverse recovery time support efficient operation in high-frequency switching circuits.
• Robust thermal design accommodates high power dissipation and extended operating temperatures up to 175°C junction temperature.

Applications

• High-voltage industrial motor drives and inverters
• Uninterruptible power supplies (UPS) systems
• Induction heating equipment

Procurement Notes

Verify the specific suffix CV1HV against official IXYS documentation to confirm pinout compatibility and electrical tolerances. Ensure that the TO-247-3 package dimensions match the target PCB footprint. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the manufacturing process.

Selection Notes

Select this component when designs require a 2500 V rating with moderate current handling capabilities around 29 A. The low gate charge facilitates driver selection, while the TO-247 package suits board-level or chassis-mount thermal management strategies. Evaluate thermal resistance values against the expected ambient conditions and heat sink capacity.

Part Context

This part belongs to the IXYS high-voltage IGBT portfolio utilizing XPT (eXtended Plate Technology). It serves as a discrete switching element within the broader family of power semiconductors designed for robust performance in demanding electrical environments requiring high voltage isolation and reliable switching behavior.

Replacement Considerations

Cross-reference with other IXYS models sharing the 2500V/29A specification and TO-247-3 package. Verify equivalent Vce(sat), switching times, and thermal characteristics before substituting to ensure circuit stability and safety margins are maintained.