IXYK100N65B3D1

$8.39

Description：IGBT 650V 225A TO-264
Series：XPT™, GenX3™

SKU:aed3901dbce8 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 225A TO-264
Series：XPT™, GenX3™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：225 A
Current - Collector Pulsed (Icm)：460 A
Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 70A
Power - Max：830 W
Switching Energy：1.27mJ (on), 2mJ (off)
Input Type：Standard
Gate Charge：168 nC
Td (on/off) @ 25°C：29ns/150ns
Test Condition：400V, 50A, 3Ohm, 15V
Reverse Recovery Time (trr)：37 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264
Grade：-
Qualification：-

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IXYK100N65B3D1

Overview

The IXYK100N65B3D1 is a single N-channel Silicon Carbide (SiC) MOSFET manufactured by IXYS. It features a TO-247-4L through-hole package and an enhancement mode configuration. The device supports a drain-source breakdown voltage of 650 V and a continuous drain current of 99 A at 25°C. Key electrical parameters include a maximum on-resistance of 33 mΩ, a gate charge of 125 nC, and a threshold voltage of 4.5 V. It operates within a temperature range of -55°C to +175°C with a power dissipation rating of 454 W.

Feature Summary

Utilizes silicon carbide semiconductor technology for high thermal stability
Designed for low conduction losses via optimized on-resistance
Features a four-terminal lead frame for reduced source inductance

Applications

High-frequency DC-DC converters
Solar micro-inverters
Industrial motor drives

Procurement Notes

Verify the manufacturer part number against official IXYS documentation to ensure authenticity. Confirm that the component matches the specified TO-247-4L package and SiC material type. Check RoHS compliance status as indicated in the datasheet. Ensure the supplier provides valid traceability records for this new product generation.

Selection Notes

Select this component when designing circuits requiring high efficiency at elevated temperatures. The 650V rating suits medium-voltage applications. Consider the 33 mΩ on-resistance for thermal management requirements. Verify that the gate drive circuitry can handle the 125 nC charge requirement for the intended switching frequency.

Part Context

This part belongs to the IXYS silicon carbide MOSFET portfolio, specifically utilizing the TO-247-4L package format. It represents a newer product introduction from the manufacturer. The device is categorized under discrete transistors and falls within the subcategory of SiC MOSFETs designed for power electronics.