IXYK180N65A5

Overview

The IXYK180N65A5 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing XPT™ thin-wafer technology and Trench IGBT process. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC25) of 400 A at 25 °C case temperature. The device operates within a junction temperature range of -55 °C to +175 °C. Key electrical parameters include a maximum collector-emitter saturation voltage (VCE(sat)) of 1.35 V at 100 A and 15 V gate drive, and a typical turn-off fall time (tfi) of 110 ns. Total gate charge (Qg) is 654 nC.

Feature Summary

• Optimized for switching frequencies up to 5 kHz
• High surge current capability with square Reverse Biased Safe Operating Area (RBSOA)
• Low gate drive requirement due to reduced gate charge
• International standard TO-264 package design

Applications

• Power Inverters
• Motor Drives
• Uninterruptible Power Supplies (UPS)
• Switch Mode Power Supplies (SMPS)

Procurement Notes

Verify the manufacturer designation on official documentation, as Littelfuse acquired IXYS power semiconductor assets. Confirm that the datasheet revision date aligns with your supply chain requirements. Ensure the component matches the specific TO-264 pinout configuration provided in the official specifications before integration into the circuit design.

Selection Notes

Select this component when high current handling and low conduction losses are required in medium-frequency applications. The TO-264 package facilitates efficient thermal management through its backside collector connection. Evaluate the thermal resistance from junction to case (0.13 °C/W) against your heatsinking capabilities to ensure operation remains within the specified 175 °C maximum junction temperature limit.

Part Context

This device belongs to the Gen5 XPT™ series of discrete IGBTs designed for robust performance in industrial power electronics. The XPT technology enables a balance between low saturation voltage and fast switching speeds, making it suitable for demanding environments where reliability under high thermal stress is critical.

Replacement Considerations

Direct replacements must match the 650 V rating, 400 A current capacity, and TO-264-3L package dimensions. Verify that any substitute maintains comparable VCE(sat) and switching energy losses to preserve the original circuit's thermal and efficiency characteristics.