IXYK30N170CV1

Overview

The IXYS IXYK30N170CV1 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring an integrated fast recovery anti-parallel diode. It utilizes XPT (Extra-Precision Technology) to optimize the trade-off between conduction losses and switching performance. The device is rated for a collector-emitter voltage of 1700 V and supports a continuous collector current of 30 A at 25°C, with a maximum power dissipation of 460 W. Designed for robust operation in demanding environments, it offers a junction temperature range from -55°C to +175°C and is housed in a TO-247AD package suitable for through-hole mounting.

Feature Summary

• Integrated fast recovery anti-parallel diode enables efficient half-bridge configurations without external components.
• XPT technology provides optimized low saturation voltage for improved efficiency in high-voltage applications.
• High thermal stability supports reliable operation up to a maximum junction temperature of 175°C.

Applications

• Induction heating systems
• Uninterruptible Power Supply (UPS) inverters
• High-frequency welding power supplies

Procurement Notes

Verify the specific suffix 'V1' against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances, as suffixes often denote revisions or specific testing conditions. Ensure the supplier provides original manufacturer documentation to validate authenticity and traceability before finalizing any acquisition.

Selection Notes

Select this component when designing circuits requiring a single-switch solution with inherent freewheeling capability in the 1700 V class. The integrated diode simplifies layout and reduces parasitic inductance compared to discrete combinations. Consider the thermal resistance characteristics and ensure adequate heatsinking to maintain junction temperatures within the specified operational limits during peak load cycles.

Part Context

This part belongs to IXYS' High Voltage XPT IGBT series, which focuses on enhancing efficiency in medium-power switching applications. The 'K' designation typically indicates the inclusion of an integrated diode, distinguishing it from standard single IGBTs like the IXYH series. This family is engineered for reliability in industrial and energy conversion sectors where high voltage blocking and moderate current handling are critical.

Replacement Considerations

Direct replacements must match the 1700 V rating, 30 A current capacity, and integrated diode configuration. Verify that alternative packages such as TO-247AD have identical pin assignments. Cross-reference switching times and saturation voltages to ensure thermal management requirements remain consistent with the existing design constraints.