IXYK85N120C4H1

Overview

The IXYS IXYK85N120C4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing XPT Gen4 technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 85 A at 25°C, with a maximum pulsed current of 220 A. The device operates in a TO-264 package with a power dissipation rating of 1150 W. It supports junction temperatures up to 175°C and includes an integrated anti-parallel fast recovery diode.

Feature Summary

• XPT Gen4 technology for optimized switching performance
• Integrated anti-parallel fast recovery diode
• High short-circuit withstand capability
• Low saturation voltage for reduced conduction losses

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Induction heating systems
• Solar inverters

Procurement Notes

Verify the specific suffix H1 against official IXYS documentation to confirm pinout and thermal characteristics. Ensure the TO-264 footprint matches the target PCB design. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.

Selection Notes

Select this component for high-power applications requiring robust short-circuit protection and low on-state losses. The integrated diode simplifies circuit topology by eliminating external freewheeling requirements. Evaluate thermal management needs based on the 1150 W dissipation rating and operating temperature limits.

Part Context

This discrete IGBT belongs to IXYS' XPT Gen4 family, designed for high-efficiency power conversion. It replaces earlier generations with improved switching speeds and lower thermal resistance. The TO-264 package provides mechanical stability for screw or solder mounting in industrial environments.

Replacement Considerations

Direct substitutes include IXYK85N120C3H1 and IXYK85N120A4. Verify pin compatibility and electrical parameters before substitution. Cross-reference datasheets for differences in switching times and thermal resistance values.