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Product Detailed Parameters
- Description：IGBT MOD 1200V 134A 690W SOT227B
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：134 A
- Power - Max：690 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：6 nF @ 25 V
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Overview
The IXYN100N120C3H1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) from IXYS, featuring XPT technology and GenX3 architecture. It integrates an anti-parallel ultra-fast diode within a PLUS264 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C. Key electrical parameters include a maximum power dissipation of 1150 W, a gate-emitter voltage limit of ±20 V, and a saturation voltage of 3.5 V at 82 A. Operating temperatures range from -55°C to 175°C junction temperature.
Feature Summary
- Optimized for low switching losses with square Reverse Bias Safe Operating Area (RBSOA).
- Features a positive thermal coefficient for Vce(sat) to facilitate parallel operation.
- Includes an integrated anti-parallel ultra-fast recovery diode.
- Provides 2500V isolation voltage capability.
Applications
- High frequency power inverters operating between 20-50 kHz.
- Uninterruptible Power Supplies (UPS) systems.
- Motor drive applications.
- Switched Mode Power Supplies (SMPS) and PFC circuits.
- Welding machines and lamp ballasts.
Procurement Notes
Verify the specific suffix H1 against official datasheets to confirm pinout compatibility and internal diode integration. Ensure thermal management solutions support the specified 175°C junction temperature limit. Confirm RoHS compliance status via manufacturer documentation prior to procurement.
Selection Notes
Select this component for designs requiring high-frequency switching capabilities up to 50 kHz. The integrated diode simplifies circuit topology for inductive loads. Verify that the gate drive voltage remains within the ±20 V absolute maximum rating to prevent device failure.
Part Context
This part belongs to the IXYS 1200V XPT IGBTs GenX3 series. It utilizes thin-wafer technology to enhance switching performance while maintaining robust avalanche ratings. The PLUS264 package provides standard international dimensions for easy replacement in existing designs.
Replacement Considerations
Cross-reference with IXYB82N120C3H1 or IXYK120N120C3 for similar voltage ratings. Verify package footprint and pin configuration before substitution. Current handling capabilities may differ significantly between alternatives.
