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The IXYN120N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the GenX3 series, rated for a collector-emitter voltage of 1200V. The device features a maximum continuous collector current of 82A at 25°C and a peak pulsed current capability of 120A. It operates within a temperature range of -55°C to +175°C. Packaged in an SOT-227B-4 configuration for screw mounting, it dissipates up to 600W of power with a typical saturation voltage of 3.2V.
Verify the specific suffix 'C3' against the manufacturer's datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides original manufacturer documentation. Confirm that the SOT-227B-4 package matches the thermal management requirements of the target application before finalizing orders.
Select this component when a 1200V rating and moderate current handling are required in a screw-mountable package. Compare the 3.2V saturation voltage against alternative devices to evaluate conduction losses. Verify that the gate charge specifications align with the driving circuit capabilities to ensure efficient switching transitions.
This part belongs to the IXYS IXYN120N120 series, which integrates XPT technology into the GenX3 family. These transistors are designed to balance low conduction losses with reliable switching performance. The series targets industrial applications requiring durable semiconductor solutions under high-stress conditions.
Cross-reference with other IXYS GenX3 IGBTs in the SOT-227B-4 package. Verify that substitute parts maintain identical voltage ratings, current limits, and thermal resistance values to ensure compatibility without redesigning the heatsink interface.