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The IXYN75N65C3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features the XPT and GenX3 technologies for optimized performance. The device is housed in an International Standard Package, typically TO-247AD-3, designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 75 A at 25°C. The saturation voltage is specified at 1.8 V, with a power dissipation (Pd) capability of 750 W. The operating temperature range extends from -55°C to +175°C, and the gate-emitter voltage limits are ±20 V.
Verify the specific package variant and suffix codes against the official IXYS datasheet before ordering. Ensure that the supplier provides genuine components with traceable documentation. Check for RoHS compliance status if required by your manufacturing standards. Confirm availability and lead times directly with authorized distributors as stock levels fluctuate.
Select this component for designs requiring 650V blocking voltage and 75A continuous current in a TO-247 package. Consider the 1.8V saturation voltage for efficiency calculations in high-current circuits. Ensure the thermal management solution supports the 750W power dissipation rating at the intended ambient temperature. Verify gate drive requirements match the ±20V limit.
This part belongs to the IXYS IXYN series of high-voltage IGBTs. It is part of the broader portfolio of power semiconductors designed for industrial and energy conversion applications. The IXYN series generally offers robust performance in demanding electrical environments, leveraging IXYS's proprietary silicon technologies for reliability.
Potential substitutes include IXYH75N65C3 or IXXH75N60C3D1, subject to pinout and parameter compatibility verification. Always consult the official datasheets to confirm electrical equivalence and mechanical fit before replacing the original component.