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Product Detailed Parameters
- Description：1200V, 85A, XPT GEN4 C4 CO-PACK
- Series：XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：Trench
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 85A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：150 A
- Power - Max：600 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：4030 pF @ 25 V
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Overview
The IXYN85N120C4H1 is a silicon carbide (SiC) MOSFET manufactured by IXYS. It features an N-channel configuration housed in a TO-247-4L through-hole package. The device supports a drain-source breakdown voltage of 1200 V and delivers a continuous drain current of 85 A at 25°C. Its maximum on-resistance is specified at 36 mΩ, with a gate-source threshold voltage of approximately 4.5 V. Operating within a temperature range from -55°C to +175°C, the component handles up to 375 W of power dissipation.
Feature Summary
- Utilizes silicon carbide semiconductor technology for high thermal stability
- Designed for low conduction losses via optimized on-resistance
- Features a four-terminal TO-247-4L package for improved thermal performance
Applications
- High-efficiency DC-DC converters
- Industrial motor drives
- Uninterruptible power supply systems
Procurement Notes
Verify the manufacturer part number against official IXYS documentation to ensure authenticity. Confirm that the specific suffix matches the required electrical characteristics and packaging style. Check RoHS compliance status directly from the datasheet before procurement.
Selection Notes
Select this component when designing circuits requiring high-voltage handling and superior thermal management compared to silicon alternatives. Ensure the gate driver can accommodate the specific threshold voltage and charge requirements. Verify that the PCB layout supports the TO-247-4L footprint and thermal dissipation needs.
Part Context
This component belongs to the IXYS C4H1 series of silicon carbide MOSFETs. These devices are engineered for high-power applications demanding efficiency and reliability. The series integrates advanced SiC technology to minimize switching and conduction losses in demanding environments.
Replacement Considerations
Consult official IXYS cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and package dimensions to fit existing designs without modification.
