IXYP10N65C3D1

IXYP10N65C3D1

$1.56
  • Description:IGBT PT 650V 30A TO-220
  • Series:GenX3™, XPT™

SKU:f79319d41932 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 650V 30A TO-220
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):54 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 10A
  • Power - Max:160 W
  • Switching Energy:240µJ (on), 110µJ (off)
  • Input Type:Standard
  • Gate Charge:18 nC
  • Td (on/off) @ 25°C:20ns/77ns
  • Test Condition:400V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr):170 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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IXYP10N65C3D1

Overview

The IXYS IXYP10N65C3D1 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) utilizing XPT-GenX3 technology. It features a TO-220AB/FP (TO-220-3) through-hole package with a maximum collector-emitter voltage of 650 V and a continuous collector current of 15 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.27 V and a power dissipation rating of 53 W. It operates within a temperature range of -55°C to +175°C, with a maximum gate-emitter voltage of ±20 V.

Feature Summary

  • Incorporates XPT-GenX3 technology for optimized switching performance and reduced conduction losses.
  • Designed for high-voltage applications with a 650 V blocking capability.
  • Utilizes a robust TO-220AB/FP leaded package suitable for through-hole mounting.

Applications

  • High-frequency switch-mode power supplies
  • Motor control drives
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific ordering suffix D1M against official IXYS documentation to confirm pinout and thermal characteristics. Ensure compatibility with standard TO-220 footprints during integration. Cross-reference datasheet revisions to validate electrical parameters before finalizing component selection for production.

Selection Notes

Select this component for circuits requiring 650 V isolation with moderate current handling up to 15 A. Evaluate thermal management requirements based on the 53 W dissipation limit in the TO-220 package. Confirm that the 2.27 V saturation voltage aligns with efficiency targets for the specific load conditions.

Part Context

This part belongs to the IXYS IGBT family featuring XPT technology, designed for efficient power switching. It serves as a discrete solution within broader power electronics designs, distinct from module-based alternatives. The numbering convention indicates specific packaging and technical variants within the manufacturer's portfolio.

Replacement Considerations

Direct substitutes include other IXYS 650V XPT IGBTs in TO-220 packages, such as the IXYP10N65C3 or similar current-rated variants. Verify pin compatibility and thermal resistance values when considering cross-manufacturer replacements.

IXYP10N65C3D1IXYP10N65C3D1
$1.56
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