SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYS IXYP10N65C3D1 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) utilizing XPT-GenX3 technology. It features a TO-220AB/FP (TO-220-3) through-hole package with a maximum collector-emitter voltage of 650 V and a continuous collector current of 15 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.27 V and a power dissipation rating of 53 W. It operates within a temperature range of -55°C to +175°C, with a maximum gate-emitter voltage of ±20 V.
Verify the specific ordering suffix D1M against official IXYS documentation to confirm pinout and thermal characteristics. Ensure compatibility with standard TO-220 footprints during integration. Cross-reference datasheet revisions to validate electrical parameters before finalizing component selection for production.
Select this component for circuits requiring 650 V isolation with moderate current handling up to 15 A. Evaluate thermal management requirements based on the 53 W dissipation limit in the TO-220 package. Confirm that the 2.27 V saturation voltage aligns with efficiency targets for the specific load conditions.
This part belongs to the IXYS IGBT family featuring XPT technology, designed for efficient power switching. It serves as a discrete solution within broader power electronics designs, distinct from module-based alternatives. The numbering convention indicates specific packaging and technical variants within the manufacturer's portfolio.
Direct substitutes include other IXYS 650V XPT IGBTs in TO-220 packages, such as the IXYP10N65C3 or similar current-rated variants. Verify pin compatibility and thermal resistance values when considering cross-manufacturer replacements.