IXYP10N65C3D1M

Overview

The IXYS IXYP10N65C3D1M is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) utilizing XPT-GenX3 technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 15 A at 25°C, with a peak pulsed current rating of 50 A. The device exhibits a typical collector-emitter saturation voltage of 2.27 V and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-220AB/FP (TO-220-3) through-hole configuration, it dissipates up to 53 W of power. The gate-emitter voltage limits are specified at ±20 V, with a leakage current of 100 nA.

Feature Summary

• Incorporates XPT-GenX3 field-stop technology for optimized trade-off between conduction losses and switching performance.
• Designed for high thermal stability with an extended maximum operating junction temperature of +175°C.
• Utilizes a robust TO-220AB/FP leaded package suitable for reliable through-hole mounting applications.

Applications

• High-frequency switch-mode power supplies
• Motor control drives and inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix 'M' against the manufacturer datasheet to confirm packaging or tape-and-reel specifications, as standard variants may differ. Cross-reference the IXYS part number with authorized distributor catalogs to ensure component authenticity and traceability. Confirm RoHS compliance status via official documentation before integration into regulated assemblies.

Selection Notes

Select this component for circuits requiring 650 V blocking capability with moderate current handling around 15 A continuous. The TO-220AB/FP package facilitates straightforward thermal management via heatsink mounting. Ensure gate drive voltages remain within the ±20 V limit to prevent dielectric breakdown while maintaining low saturation voltage for efficiency.

Part Context

This IGBT belongs to the IXYS C3-class series, characterized by fast recovery anti-parallel diodes integrated within the module structure. The XPT-GenX3 generation represents an evolution in field-stop IGBT designs, offering improved short-circuit ruggedness compared to earlier non-field-stop architectures. It serves as a discrete alternative to larger modules in medium-power industrial applications.

Replacement Considerations

Direct pin-compatible substitutes include other IXYS 650V IGBTs in TO-220 packages such as the IXYP10N65C3D1. Verify that replacement devices match the required Vceo, Ic, and Vce(sat) parameters to maintain circuit performance integrity without redesigning the thermal interface.