ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TO220AB
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The IXYS IXYP15N65B3D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Silicon technology. It features the XPT-GenX3 architecture and is housed in a TO-220AB/FP (TO-220-3) through-hole package. Key electrical parameters include a maximum collector-emitter voltage of 650 V, a continuous collector current of 15 A at 25°C, and a collector-emitter saturation voltage of 2.27 V. The device supports a power dissipation of 53 W and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Incorporates XPT-GenX3 technology for optimized switching performance
- Designed for high-voltage applications with 650 V blocking capability
- Utilizes TO-220AB/FP package for reliable through-hole mounting
Applications
- High-frequency power conversion circuits
- Industrial motor drive systems
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify the specific suffix D1 against official IXYS documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid manufacturer traceability. Cross-reference the datasheet revision date to guarantee compatibility with current design specifications. Confirm that the TO-220AB/FP package dimensions match the target PCB footprint requirements.
Selection Notes
Select this component for designs requiring moderate current handling with low conduction losses. The 650 V rating suits general-purpose industrial and consumer power supplies. Evaluate thermal management needs based on the 53 W dissipation limit. Compare switching speeds against alternative IGBTs if high-frequency operation above 20 kHz is required.
Part Context
This part belongs to the IXYS IXYP series of XPT-GenX3 IGBTs. These devices are engineered for efficiency in medium-power applications. The series typically integrates fast recovery diodes for inductive load switching. The TO-220 form factor allows for standard heatsinking solutions in compact enclosures.
Replacement Considerations
Official substitutes include IXYP10N65C3D1 and IXYP20N65B3D1 from the same manufacturer family. Verify current ratings and saturation voltages when cross-referencing these alternatives.
