IXYP15N65C3

Overview

The IXYS IXYP15N65C3 is a single silicon Insulated Gate Bipolar Transistor (IGBT) utilizing Planar technology. It features a TO-220-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 38 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.27 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 200 W. The component operates within a temperature range of -55°C to +175°C.

Feature Summary

• Single IGBT configuration with Planar technology
• Through-hole mounting in a TO-220-3 package
• High thermal stability up to 175°C junction temperature

Applications

• Industrial motor drives
• Power supply units
• Electronic equipment switching circuits

Procurement Notes

Verify the manufacturer designation as Littelfuse due to the acquisition of IXYS. Confirm that the specific part number matches the required 650V rating and TO-220-3 package type. Ensure compatibility with standard through-hole assembly processes and check for any updated RoHS compliance documentation from the current supplier.

Selection Notes

Select this component for applications requiring a robust single-switch solution with high voltage tolerance. The 38A current rating suits moderate power levels. Consider the 2.27V saturation voltage for efficiency calculations. The wide operating temperature range allows use in demanding industrial environments without additional thermal derating constraints.

Part Context

This device belongs to the IXYS Planar series of discrete semiconductors. It is categorized under single IGBT transistors. The product line provides reliable switching capabilities for power electronics. The manufacturer has been acquired by Littelfuse, which may affect branding on official datasheets.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided data.