SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYS IXYP24N100A4 is a Gen5 XPT trench-gate Insulated Gate Bipolar Transistor (IGBT) housed in a TO-263 package. It features a 1000V collector-emitter voltage rating and a continuous collector current of 24A at 25°C. The device utilizes XPT technology to achieve low saturation voltage, with a maximum Vce(sat) of 2.7V at 24A. Key switching parameters include a typical turn-on delay time of 110ns, rise time of 48ns, turn-off delay time of 130ns, and fall time of 90ns at 150°C. It operates within a junction temperature range of -40°C to 175°C.
Verify the specific datasheet revision and ordering suffixes directly with the manufacturer or authorized distributors before procurement. Confirm that the component meets all required electrical specifications for the target application environment. Ensure compliance with relevant RoHS directives and check for any end-of-life notices or recommended new designations from the supplier.
Select this component when a compact surface-mount IGBT solution is required for high-voltage applications. The TO-263 package facilitates efficient thermal management compared to through-hole alternatives. Evaluate the trade-off between the low on-state voltage and switching speeds against the specific frequency requirements of the circuit design.
This part belongs to the IXYS Gen5 XPT IGBT family, which combines trench gate technology with plasma trapping layers. This combination optimizes the balance between conduction and switching losses. The series is designed for general-purpose industrial applications requiring reliable high-voltage switching capabilities in a small footprint.
Direct pin-to-pin replacements should be verified against the official cross-reference list provided by IXYS. Consider alternative models within the same Gen5 XPT family if current ratings or voltage thresholds differ slightly from the original design requirements.