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Product Detailed Parameters
- Description：IGBT 1200V 75A TO-220-3
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：145 A
- Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 30A
- Power - Max：500 W
- Switching Energy：2.6mJ (on), 1.1mJ (off)
- Input Type：Standard
- Gate Charge：69 nC
- Td (on/off) @ 25°C：19ns/130ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXYP30N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 family, manufactured by IXYS. It features a 1200 V collector-emitter voltage rating and supports a maximum continuous collector current of 75 A. The device incorporates epiPlan XPT technology for optimized switching performance. Rated at 500 W power dissipation, it utilizes a TO-220-3 through-hole package. Designed for high-frequency applications up to 50 kHz, this component offers low on-state voltage drop characteristics suitable for industrial power electronics.
Feature Summary
- Utilizes IXYS GenX3 epiPlan XPT technology for enhanced switching efficiency
- Designed for high-voltage switching in demanding industrial environments
- Provides robust thermal management capabilities via standard through-hole mounting
Applications
- Industrial motor drives and control systems
- High-voltage power supply inverters
- Resonant converter circuits operating at elevated frequencies
Procurement Notes
Verify the specific ordering suffix against official IXYS documentation to ensure correct pinout and electrical specifications. Confirm RoHS compliance status with the supplier prior to purchase. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Ensure the procurement channel provides valid traceability records for quality assurance purposes.
Selection Notes
Select this component when a 1200 V blocking capability and 75 A continuous current handling are required. Consider the TO-220-3 package constraints for thermal design and PCB layout. Evaluate the 500 W power dissipation limit against the expected duty cycle and ambient temperature conditions. Ensure gate drive requirements align with the specified switching characteristics for optimal performance.
Part Context
This IGBT belongs to the IXYS GenX3 series, which represents advanced silicon technology for power conversion. The brand IXYS has been acquired by Littelfuse, though products may still carry original branding. This specific model serves as a discrete solution for medium-power applications requiring reliable high-voltage switching without integrated driver complexity.
Replacement Considerations
The IXYP30N120C3 may be functionally comparable to the IXYS IXYH30N120C3 within the same product line. Verify pin compatibility and exact electrical parameters before substituting. Consult official datasheets to confirm interchangeability regarding thermal resistance and switching times.
