IXYP8N90C3D1

Overview

The IXYP8N90C3D1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing Silicon technology and XPT planar architecture. It features a collector-emitter breakdown voltage of 900 V and a continuous collector current rating of 20 A at 25 °C. The device exhibits a maximum collector-emitter saturation voltage of 2.5 V and operates within a junction temperature range of -55 °C to +175 °C. Packaged in a D2PAK-3 (TO-263-3) surface-mount configuration, it includes an integrated anti-parallel diode and maintains a gate-emitter leakage current of 100 nA.

Feature Summary

• XPT Planar Technology for optimized switching performance
• Integrated Fast Recovery Anti-Parallel Diode
• Surface-Mount TO-263-3 Package Design

Applications

• High-frequency power conversion circuits
• Motor drive inverters
• Uninterruptible Power Supply (UPS) systems

Procurement Notes

Verify the specific manufacturer datasheet for the IXYP8N90C3D1 to confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure that the ordering suffix corresponds exactly to the required package variant and thermal characteristics. Cross-reference the component marking with official manufacturer documentation to prevent counterfeit substitution during acquisition.

Selection Notes

Select this component when a 900V IGBT with low saturation voltage is required for high-efficiency applications. The 20A current rating suits moderate-power designs. Verify that the PCB layout supports the D2PAK-3 footprint and that the thermal management system can handle the specified power dissipation limits under the intended operating conditions.

Part Context

This part belongs to the IXYS GenX3 family of IGBTs, which are engineered for high reliability and efficiency. The 'P' designation typically indicates a specific package style within the IXYS portfolio, distinguishing it from through-hole or module variants. It serves as a discrete solution for power switching tasks requiring robust voltage handling capabilities.

Replacement Considerations

Direct substitutes include other IXYS 900V IGBTs in the same package, such as the IXYA8N90C3D1. Evaluate alternative manufacturers like Infineon or Mitsubishi for equivalent 900V/20A TO-263-3 devices, ensuring pinout compatibility and similar electrical parameters.