IXYQ30N65B3D1

Overview

The IXYQ30N65B3D1 is a single N-channel Power MOSFET manufactured by IXYS, utilizing Silicon technology. It is housed in a TO-247-3 package designed for through-hole mounting. The device features a drain-source breakdown voltage (Vds) of 650 V and a continuous drain current (Id) of 30 A at 25°C. Its on-state resistance (Rds(on)) is specified at 180 mΩ. The gate-source voltage limits are -20 V to +20 V. Thermal performance includes a maximum power dissipation (Pd) of 290 W, with an operating temperature range from -55°C to +150°C. The component belongs to the X-Class series.

Feature Summary

• X-Class optimized design for high reliability
• Trench technology for low conduction losses
• Robust avalanche capability

Applications

• High-voltage switching applications
• Industrial motor drives
• Power supplies

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-247-3 package dimensions match the target PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 290 W power dissipation limit under actual operating conditions.

Selection Notes

Select this component when a 650 V rating and 30 A continuous current capacity are required in a standard TO-247 package. Compare Rds(on) values against alternative 650 V MOSFETs to ensure optimal efficiency for the specific load profile. Verify that the gate charge characteristics align with the driving circuit's switching frequency capabilities.

Part Context

This part belongs to IXYS' X-Class series of high-voltage MOSFETs. These devices are engineered for demanding industrial environments where long-term reliability and robustness are critical. The TO-247-3 package provides a balance of electrical performance and mechanical durability suitable for through-hole assembly in power electronics modules.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing should be performed using key parameters: 650 V Vds, 30 A Id, 180 mΩ Rds(on), and TO-247-3 package compatibility.