IXYR100N120C3

Overview

The IXYR100N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 104 A at 25°C. The device utilizes the ISOPLUS247 package for through-hole mounting, providing a power dissipation capacity of 484 W. It supports a maximum operating temperature of +175°C and a minimum of -55°C. The component is designed for switching frequencies up to 50 kHz, with a maximum gate-emitter voltage rating of ±20 V.

Feature Summary

• High-voltage capability with 1200 V blocking voltage for robust operation in demanding electrical environments.
• ISOPLUS247 package design facilitates efficient thermal management and reliable through-hole integration.
• Optimized for high-frequency applications with a specified switching speed limit of 50 kHz.

Applications

• Industrial motor control systems requiring high voltage isolation and current handling.
• Uninterruptible Power Supply (UPS) units needing reliable high-power switching components.
• Inverter circuits in renewable energy conversion systems such as solar or wind power setups.

Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Ensure that the ordering suffix matches the required packaging configuration. Confirm that the supplier provides traceability documentation consistent with industrial standards. Check for any recent lifecycle notifications regarding obsolescence or recommended alternatives.

Selection Notes

Select this component when an application requires a single IGBT with 1200 V rating and approximately 100 A continuous current capability. The ISOPLUS247 package is suitable for designs prioritizing thermal performance in through-hole layouts. Consider the 50 kHz switching limit when designing gate drive circuits and snubber networks. Evaluate the 484 W power dissipation against the available heatsinking capacity in the final enclosure.

Part Context

This part belongs to the IXYS IGBT portfolio, specifically targeting high-power industrial applications. It represents a discrete solution compared to integrated modules, offering flexibility in custom PCB design. The ISOPLUS247 package is a standard form factor for medium-to-high power transistors, ensuring compatibility with existing thermal interface materials and mounting hardware used in similar IXYS devices.

Replacement Considerations

Direct pin-compatible replacements within the same package family should be evaluated based on identical voltage and current ratings. Verify that alternative parts maintain the same switching speed characteristics to avoid gate drive redesigns. Cross-reference thermal resistance values to ensure equivalent heat dissipation capabilities under identical mounting conditions.