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Product Detailed Parameters
- Description：IGBT
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IXYR100N65A3V1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the GenX3 family, housed in an ISOPLUS247 package with screw mount installation. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a power dissipation rating of 600 W, and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Incorporates IXYS XPT technology for optimized switching performance and low conduction losses.
- Designed with GenX3 architecture to enhance ruggedness and thermal stability.
- Utilizes ISOPLUS247 packaging for robust mechanical mounting and efficient heat dissipation.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix 'V1' against the official IXYS datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Confirm that the ISOPLUS247 package dimensions match the target PCB or heatsink design requirements prior to ordering.
Selection Notes
Select this component for applications requiring high voltage blocking capability combined with moderate current handling in a screw-mount configuration. Consider the 1.8 V saturation voltage for efficiency calculations in medium-power converters. Evaluate the thermal resistance characteristics relative to the intended cooling solution to ensure operation remains within the specified junction temperature limits during peak loads.
Part Context
This part belongs to the IXYS IXYR series of discrete IGBTs, specifically leveraging the GenX3 platform. It serves as a high-reliability switching element within the broader portfolio of power semiconductors designed for industrial and energy conversion markets. The ISOPLUS247 form factor distinguishes it from smaller surface-mount alternatives, targeting higher power density assemblies.
Replacement Considerations
Direct substitutes may include other IXYS GenX3 devices in similar packages, such as the IXYN100N65A3, provided pinout and thermal specifications align. Cross-brand replacements require careful verification of Vceo, Ic, and Vce(sat) parameters to maintain circuit integrity.
