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The IXYT12N250CV1HV is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the XPT™ series, manufactured by IXYS. It features a collector-emitter maximum voltage of 2.5 kV and a continuous collector current of 28 A at 25°C. The device utilizes a TO-268HV (TO-268A) surface mount package with a power dissipation rating of 310 W. It operates within a temperature range of -55°C to +175°C and includes an integrated diode.
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-268HV footprint matches your PCB layout requirements. Ensure thermal management solutions are adequate for the 310 W power dissipation rating under your specific operating conditions.
Select this component when a high-voltage, surface-mount IGBT with integrated diode functionality is required. The 2.5 kV rating suits applications demanding significant voltage isolation. Consider the TO-268HV package for automated assembly processes where through-hole alternatives like TO-247 are not feasible.
This part belongs to the IXYS XPT™ High Voltage IGBT family, designed for robust performance in demanding power electronics applications. The IXYT series specifically denotes devices packaged in the TO-268HV form factor, combining high voltage capability with surface mount convenience.
The IXYT25N250CHV is a similar high-voltage IGBT in the same series but offers a higher current rating of 95 A. Verify if the increased current capacity aligns with your system requirements and if the pinout compatibility remains consistent.