IXYT20N120C3D1HV

Overview

The IXYT20N120C3D1HV is a single N-channel high-speed Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing XPT technology for optimized performance. It features a maximum collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 36A, with a pulsed current capability of 88A. The device is housed in a TO-268 surface-mount package, designed for efficient thermal management in power electronics applications.

Feature Summary

• Utilizes IXYS XPT technology to achieve low conduction losses and robust short-circuit withstand capability.
• Designed as a high-speed switching device suitable for demanding power conversion environments.

Applications

• High-frequency power supply circuits
• Industrial motor drive inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix HV against official datasheets to confirm voltage ratings and packaging details. Ensure compatibility with surface-mount assembly processes due to the TO-268 form factor. Cross-reference electrical parameters with system requirements before integration.

Selection Notes

Select this component for applications requiring high voltage isolation and rapid switching speeds. The TO-268 package facilitates direct board mounting, reducing thermal resistance compared to through-hole alternatives. Evaluate thermal dissipation needs based on the 230W power dissipation rating.

Part Context

This part belongs to IXYS' portfolio of discrete power semiconductors, specifically within the IGBT transistor category. It represents a solution for medium-power switching applications where efficiency and reliability are critical, leveraging silicon-based trench gate technology.

Replacement Considerations

Direct substitutes require matching 1200V rating, ~36A current capacity, and TO-268 package. Verify pinout compatibility and thermal characteristics with alternative manufacturers' high-voltage IGBTs.