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Product Detailed Parameters
- Description：IGBT 2500V 95A TO-268
- Series：XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：95 A
- Current - Collector Pulsed (Icm)：235 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 25A
- Power - Max：937 W
- Switching Energy：8.3mJ (on), 7.3mJ (off)
- Input Type：Standard
- Gate Charge：147 nC
- Td (on/off) @ 25°C：15ns/230ns
- Test Condition：1250V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr)：34 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268
- Grade：-
- Qualification：-
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Overview
The IXYT25N250CHV is a single N-channel High Voltage eXtended Punch-Through (HV XPT) Insulated Gate Bipolar Transistor manufactured by IXYS. It utilizes silicon technology and is housed in a D3PAK-3 (TO-268-3) surface-mount package. The device supports a maximum collector-emitter voltage of 2.5 kV and delivers a continuous collector current of 95 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 4 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 937 W. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- High voltage capability with 2.5 kV blocking voltage for robust high-power switching
- Optimized HV XPT technology for low conduction losses
- Surface-mount D3PAK-3 package design for automated assembly
Applications
- High-voltage industrial motor drives
- Uninterruptible power supply (UPS) systems
- High-frequency welding inverters
Procurement Notes
Verify the specific ordering suffix CHV against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid traceability documentation. Confirm RoHS compliance status directly from the supplier before finalizing orders.
Selection Notes
Select this component when a single-switch configuration requires high voltage blocking and moderate current handling in a surface-mount form factor. Compare the 4 V saturation voltage against alternative packages to evaluate thermal management requirements for the target application circuit.
Part Context
This part belongs to the IXYS High Voltage IGBT series, designed for demanding power electronics applications. It complements other IXYS devices like the through-hole IXYX25N250CV1, offering a similar electrical profile but adapted for surface-mount integration.
Replacement Considerations
The IXYX25N250CV1 offers identical electrical ratings but uses a TO-247-PLUS-3 through-hole package. Verify mechanical fit and thermal interface compatibility before substituting the D3PAK-3 package with the through-hole variant.
