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Product Detailed Parameters
- Description：IGBT 4500V 60A TO-268HV
- Series：XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：4500 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 30A
- Power - Max：430 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：88 nC
- Td (on/off) @ 25°C：38ns/168ns
- Test Condition：960V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXYT)
- Grade：-
- Qualification：-
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Overview
The IXYT30N450HV is a silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS XPT series, housed in a D3PAK-3 (TO-268-3) surface-mount package. It features a collector-emitter breakdown voltage of 4.5 kV and a continuous collector current of 60 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 3.9 V and a gate charge of 88 nC. With a power dissipation rating of 430 W, it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes XPT technology for optimized high-voltage performance
- Designed for surface-mount installation via TO-268-3 package
- Capable of operation up to 150°C junction temperature
Applications
- High-voltage industrial motor drives
- Switch-mode power supplies requiring >4kV isolation
- Inverter circuits in renewable energy systems
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm the specific manufacturing date code and lot traceability against the datasheet specifications. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly due to the sensitivity of the gate structure.
Selection Notes
Select this component when a surface-mount solution is required for applications demanding 4.5 kV blocking capability. Compare the 60 A continuous current rating and 3.9 V saturation voltage against system thermal constraints. Consider the TO-268-3 footprint compatibility with existing PCB layouts versus through-hole alternatives like the IXTX series.
Part Context
This part belongs to the IXYS XPT™ family of high-voltage IGBTs. It complements other high-voltage discrete semiconductors such as the IXTY and IXYF series, offering a balance between high voltage blocking and moderate current handling in a compact surface-mount form factor suitable for dense electronic assemblies.
Replacement Considerations
Direct pin-compatible replacements within the same package and voltage class should be verified against the official IXYS cross-reference list. Substitutes must match the 4.5 kV rating and TO-268-3 footprint. Evaluate thermal resistance and switching characteristics to ensure circuit stability.
