IXYT55N120A4HV

IXYT55N120A4HV

$13.37
  • Description:IGBT PT 1200V 175A TO-268HV
  • Series:-

SKU:6227cefea8b3 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 1200V 175A TO-268HV
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):175 A
  • Current - Collector Pulsed (Icm):350 A
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 55A
  • Power - Max:650 W
  • Switching Energy:2.3mJ (on), 5.3mJ (off)
  • Input Type:Standard
  • Gate Charge:110 nC
  • Td (on/off) @ 25°C:23ns/300ns
  • Test Condition:600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr):35 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package:TO-268HV (IXYT)
  • Grade:-
  • Qualification:-

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IXYT55N120A4HV

Overview

The IXYT55N120A4HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the fourth-generation Trench IGBT family. The device features a TO-263HV-3 surface-mount package with a maximum collector-emitter voltage of 1200 V. At 25°C, it supports a continuous collector current of 76 A and a pulsed collector current of 130 A. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 375 W. The component operates within a temperature range of -55°C to +175°C.

Feature Summary

  • Employs XPT thin-wafer technology for optimized low conduction losses.
  • Features a high-power-density design suitable for compact applications.
  • Supports switching frequencies up to 5 kHz.

Applications

  • Power inverters
  • Motor drives
  • PFC circuits
  • Battery chargers

Procurement Notes

Verify the specific suffix HV against official datasheets to confirm the package type and thermal characteristics. Ensure the ordering part number matches the required mounting style and pin configuration. Cross-reference the manufacturer's latest documentation to validate RoHS compliance status and any recent revisions to the technical specifications before finalizing procurement.

Selection Notes

Select this component for designs requiring 1200V blocking capability in a surface-mount format. The 2.1V saturation voltage offers a balance between conduction loss and switching performance. Verify that the PCB layout accommodates the TO-263HV-3 footprint and provides adequate thermal management for the 375W dissipation rating under expected operating conditions.

Part Context

This device is part of the IXYS IXYxN120A4 series, which includes variants like IXYH55N120A4 and IXYA30N120A4HV. While sharing the same core XPT Gen4 technology and voltage rating, differences exist in packaging (TO-247 vs. TO-263HV) and current ratings. The IXYT55N120A4HV specifically targets surface-mount applications compared to through-hole alternatives in the same family.

Replacement Considerations

Direct substitutes within the same series include IXYA30N120A4HV or IXYA20N120B4HV, though these have lower current ratings. For equivalent current capacity in a different package, consider IXYH55N120A4. Verify pin compatibility and thermal resistance values when swapping packages.

IXYT55N120A4HVIXYT55N120A4HV
$13.37
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