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Product Detailed Parameters
- Description：IGBT 900V 165A TO-268AA
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：165 A
- Current - Collector Pulsed (Icm)：360 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 80A
- Power - Max：830 W
- Switching Energy：4.3mJ (on), 1.9mJ (off)
- Input Type：Standard
- Gate Charge：145 nC
- Td (on/off) @ 25°C：34ns/90ns
- Test Condition：450V, 80A, 2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXYT80N90C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series, utilizing XPT technology. It features a maximum collector-emitter voltage of 900 V and a continuous collector current of 80 A at 25°C. The device has a typical saturation voltage of 2.4 V and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-247AD-3 form factor for through-hole mounting, it dissipates up to 600 W of power. Key electrical parameters include a gate-emitter leakage current of 100 nA and a thermal resistance from junction to case of 0.35 K/W.
Feature Summary
- GenX3 architecture with XPT technology for optimized switching performance
- High thermal stability supporting operation up to 175°C
- Robust short-circuit capability for industrial protection
Applications
- Industrial motor drives and inverters
- Switched-mode power supplies (SMPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix 'C3' against the manufacturer's latest datasheet to confirm pinout compatibility and exact electrical tolerances. Ensure the TO-247AD-3 package dimensions match the target PCB footprint. Request RoHS compliance documentation and check for any recent lifecycle status updates such as NRND or obsolescence notices before finalizing procurement.
Selection Notes
Select this component for high-voltage applications requiring efficient switching at moderate frequencies. Compare the 2.4 V saturation voltage against alternative IGBTs to evaluate conduction losses. Consider the 80 A current rating relative to the expected load profile and ambient cooling conditions to ensure the 600 W power dissipation limit is not exceeded during peak operations.
Part Context
This part belongs to the IXYS GenX3 family, which integrates advanced trench gate technology with field-stop structures. The XPT (eXtended Plateau Technology) optimizes the trade-off between low on-state voltage and fast switching speeds. This specific model targets medium-power industrial converters where reliability and thermal efficiency are critical design constraints.
Replacement Considerations
Potential substitutes include the IXYH80N90C3 or IXXH80N90C3D1, provided they share the same TO-247AD-3 package and compatible electrical characteristics. Verify that any replacement maintains the 900 V rating and similar saturation voltage to ensure circuit performance parity.
