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Product Detailed Parameters
- Description：IGBT PT 1200V 300A TO-268HV
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：300 A
- Current - Collector Pulsed (Icm)：520 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 85A
- Power - Max：1150 W
- Switching Energy：4.9mJ (on), 8.3mJ (off)
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：40ns/400ns
- Test Condition：600V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXYT)
- Grade：-
- Qualification：-
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Overview
The IXYT85N120A4HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing XPT technology for optimized performance. It features a collector-emitter voltage of 1200V and a continuous collector current of 300A at 25°C. The device operates in a TO-268HV package with a maximum power dissipation of 1150W. Key electrical parameters include a saturation voltage of 1.5V and a gate-emitter voltage range of -20V to +20V. It supports a junction temperature up to 175°C and is designed for high-power industrial applications requiring robust switching capabilities.
Feature Summary
- XPT technology provides an optimized trade-off between conduction losses and switching speed.
- High thermal stability with a maximum operating junction temperature of 175°C.
- Robust short-circuit withstand capability suitable for demanding industrial environments.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Procurement Notes
Verify the specific suffix HV against the official datasheet to confirm pinout and thermal characteristics. Ensure the ordering part number matches the exact package variant required for your PCB layout. Cross-reference the manufacturer's latest revision history to confirm RoHS compliance status and any design changes prior to procurement.
Selection Notes
Select this component when high current handling and low on-state voltage are critical for system efficiency. The TO-268HV package offers superior thermal dissipation compared to standard surface-mount options. Consider the gate charge requirements for driver selection to ensure optimal switching performance within the specified voltage limits.
Part Context
This device belongs to IXYS' discrete IGBT portfolio, specifically leveraging XPT (eXtended Plate Technology) for improved ruggedness. It serves as a core switching element in medium-to-high power conversion systems. The product line emphasizes reliability and thermal management for continuous operation in harsh electrical conditions.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drivers and thermal interfaces before considering alternative manufacturers or series.
