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The IXYS IXYX100N120C3 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3 series. It utilizes XPT thin-wafer technology to achieve low saturation voltage and optimized switching performance. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C. It operates within a junction temperature range of -55°C to +175°C and supports switching frequencies up to 50 kHz. Packaged in a PLUS247 through-hole configuration, it offers a power dissipation rating of 1150 W with a maximum gate-emitter voltage of ±20 V.
Verify the specific suffix C3 against official datasheets to confirm pinout and electrical characteristics match the design requirements. Ensure the PLUS247 package dimensions align with the PCB footprint and thermal management strategy. Confirm that the 100 A continuous current rating meets the application's peak load demands under expected operating temperatures.
Select this component when high switching speeds are required alongside moderate current handling capabilities. The 1200 V rating suits medium-voltage applications, while the 100 A current capacity fits smaller industrial loads. Compare the 1150 W power dissipation against available heatsinking solutions to ensure safe thermal operation within the specified temperature limits.
This part belongs to the IXYS 1200V XPT IGBTs GenX3 family. It shares core technology with other devices in the series but differs in current ratings and package options. The GenX3 generation focuses on balancing low conduction losses with fast switching times for efficient power conversion.
Check for direct substitutes within the same GenX3 family or newer generations like Gen4/Gen5 if higher efficiency is needed. Verify that any replacement maintains the PLUS247 package and 1200V rating. Cross-reference saturation voltages and switching times to ensure circuit compatibility.