IXYX110N120A4

Overview

The IXYX110N120A4 is a 1200V N-channel IGBT from the GenX4 series, utilizing XPT technology for optimized low conduction losses. It features a PLUS247 through-hole package with a collector-emitter saturation voltage of 1.80V maximum at 110A and 15V gate drive. The device supports a continuous collector current of 110A at 110°C case temperature and handles up to 375A chip capability at 25°C. Thermal resistance junction-to-case is 0.11°C/W, with an operating temperature range from -55°C to +175°C.

Feature Summary

• Optimized for low conduction losses via XPT thin-wafer technology
• Positive thermal coefficient of Vce(sat) for safe parallel operation
• International standard PLUS247 package for easy mounting

Applications

• Power inverters
• Uninterruptible power supplies (UPS)
• Motor drives
• Switch-mode power supplies (SMPS)
• Welding machines

Procurement Notes

Verify datasheet revision DS101021A(8/20) against manufacturing date codes. Confirm package outline matches PLUS247 dimensions. Check RoHS compliance status in official documentation before integration into production assemblies.

Selection Notes

Select this component for high-power density applications requiring low on-state voltage drop. Ensure gate drive circuitry provides sufficient current for the 305nC total gate charge. Verify thermal management design accommodates the 1360W power dissipation rating at 25°C case temperature.

Part Context

This part belongs to the IXYS GenX4 family of trench IGBTs. It shares the PLUS247 footprint with other high-current devices in the lineup but offers specific trade-offs between switching speed and conduction loss tailored for medium-frequency switching applications up to 5kHz.

Replacement Considerations

Direct pin-compatible replacements within the same manufacturer's portfolio may exist. Verify electrical parameters such as Vce(sat) and switching times match application requirements before substitution.