IXYX140N90C3

Overview

The IXYX140N90C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing XPT technology for optimized performance. It features a 900V collector-emitter voltage rating and a continuous collector current of 140A at 25°C, with a peak short-circuit capability of 310A. The device is housed in a PLUS247-3 through-hole package, offering a power dissipation capacity of 1630W. Designed for high-efficiency switching, it operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Utilizes IXYS XPT (eXtended Plateau Technology) for low conduction losses and fast switching characteristics.
• Robust short-circuit withstand capability ensures protection during fault conditions.
• Integrated anti-parallel diode provides efficient freewheeling functionality.
• PLUS247-3 package design facilitates effective thermal management and reliable mounting.

Applications

• Industrial motor drives and variable frequency drives
• Uninterruptible power supply (UPS) systems
• High-frequency welding equipment

Procurement Notes

Verify the specific suffix 'X' against datasheet documentation to confirm the exact electrical parameters and pinout configuration intended for your application. Ensure that the PLUS247-3 package dimensions align with your PCB layout requirements. Cross-reference the manufacturer's latest revision history to confirm component availability and any potential updates to recommended operating conditions or thermal resistance values prior to finalizing procurement orders.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities combined with substantial current handling. The XPT technology makes it suitable for medium-power industrial converters where efficiency is critical. Consider the thermal resistance of the PLUS247-3 package when designing heatsinking solutions. Evaluate the gate charge specifications against your driver capabilities to ensure optimal switching speeds without excessive electromagnetic interference.

Part Context

This IGBT belongs to IXYS's portfolio of high-voltage power semiconductors designed for demanding industrial environments. It complements other devices in the IXYY and IXXN series, offering a balance between robustness and switching speed. The product line targets sectors such as renewable energy inverters and traction systems, providing reliable performance under high-stress electrical conditions typical of modern power electronics designs.

Replacement Considerations

Direct substitutes include the IXYK140N90C3, which shares similar electrical ratings and packaging but may differ in specific internal construction details. Verify compatibility by comparing key parameters such as Vceo, Ic, and thermal characteristics before substitution.