IXYX200N65B3

Overview

The IXYX200N65B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench and XPT technology to achieve high efficiency in power switching applications. The device features a collector-emitter maximum voltage of 650 V and a continuous collector current rating of 200 A at 25°C. It operates within a temperature range from -55°C to +175°C, with a maximum power dissipation of 1.61 kW. Packaged in a TO-247-PLUS-3 through-hole housing, it offers a typical saturation voltage of 1.2 V and a gate-emitter leakage current of 200 nA.

Feature Summary

• Integrates IXYS Gen5 XPT technology for optimized trade-off between conduction losses and switching performance.
• Features a robust TO-247-PLUS-3 package designed for efficient thermal management and reliable screw mounting.
• Provides high short-circuit capability suitable for demanding industrial protection requirements.

Applications

• Industrial motor drives and servo systems
• High-frequency welding inverters
• Uninterruptible power supplies (UPS)
• Induction heating equipment

Procurement Notes

Verify the specific suffix against official IXYS documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with existing thermal interface materials and mounting hardware specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to final procurement decisions.

Selection Notes

Select this component for designs requiring 650V blocking capability with moderate current handling up to 200A. Evaluate the thermal resistance of the TO-247-PLUS-3 package against the expected heat sink capacity. Compare the 1.2V saturation voltage against alternative devices to determine overall system efficiency targets.

Part Context

This part belongs to the IXYS IGBT portfolio utilizing advanced trench gate structures. It serves as a high-power switching element within the broader family of discrete semiconductors designed for medium-voltage industrial applications. The device represents a balance between cost-effectiveness and performance for standard power conversion topologies.

Replacement Considerations

Cross-reference with other IXYS models sharing the same pinout and voltage ratings if supply constraints exist. Verify that any substitute maintains equivalent thermal resistance and gate charge parameters to ensure circuit stability without redesigning the driver stage.