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The IXYS IXYX25N250CV1 is a single N-channel Silicon Insulated Gate Bipolar Transistor (IGBT) utilizing High Voltage XPT technology. It features a TO-247-PLUS-3 through-hole package with a maximum collector-emitter voltage of 2.5 kV and a continuous collector current of 95 A at 25°C. The device exhibits a collector-emitter saturation voltage of 3.4 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 937 W. It operates within a temperature range of -55°C to +175°C.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the procurement channel provides traceable documentation matching the IXYS manufacturing standards for this high-voltage component series.
Select this component when a 2.5 kV blocking capability and 95 A continuous current are required in a through-hole configuration. Consider the 3.4 V saturation voltage for conduction loss calculations and verify that the thermal resistance characteristics of the TO-247-PLUS-3 package meet the system's heat dissipation requirements.
This part belongs to the IXYS High Voltage IGBT family, specifically designed for demanding power conversion applications. The 'X' designation typically indicates the use of XPT technology, while the 'CV1' suffix defines the specific packaging and terminal configuration within the product line.
Cross-reference with other IXYS models sharing the same voltage and current ratings in the TO-247-PLUS-3 package. Verify that any substitute maintains identical pinout geometry and comparable saturation voltage characteristics to ensure circuit compatibility.