SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYY8N90C3-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and belongs to the XPT series, housed in a TO-252-3 (DPAK) surface-mount package. The device supports through-hole or SMD installation styles with a maximum collector-emitter voltage of 900 V. It features a continuous collector current rating of 8 A at 25°C and a power dissipation capacity of 125 W. The component operates within a temperature range from -55°C to +175°C junction temperature.
Verify the specific suffix '-TRL' indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status via the manufacturer's latest documentation. Ensure the supplier provides valid traceability for the IXYS brand. Check for any regional distribution restrictions before finalizing procurement.
Select this component for designs requiring a 900V rated IGBT in a compact TO-252-3 package. The 8A current rating suits moderate power applications. Consider thermal management requirements given the 125W dissipation limit. Verify gate drive compatibility with standard logic levels if applicable.
This part is part of IXYS's discrete IGBT portfolio, specifically utilizing the XPT technology platform. It serves as a surface-mount alternative to larger through-hole packages like TO-247, offering similar electrical characteristics in a smaller footprint for PCB-integrated power solutions.
Direct substitutes include the tube-packaged version IXYY8N90C3. Other IXYS XPT series IGBTs with compatible voltage and current ratings may serve as functional equivalents if package constraints are relaxed.