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Product Detailed Parameters
- Description：JFET N-CH 25V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：80 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：8 Ohms
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi J108 is an N-channel Junction Field-Effect Transistor (JFET) designed for digital switching applications requiring low on-resistance. It is available in TO-92 and SuperSOT-3 packages. Key electrical parameters include a Drain-Gate Voltage of 25 V, Gate-Source Breakdown Voltage of -25 V, and Zero-Gate Voltage Drain Current ranging from 80 mA to 40 mA depending on the specific variant. The Drain-Source On Resistance is specified at 8.0 Ω. Total device dissipation reaches 625 mW in the TO-92 package and 350 mW in the SuperSOT-3 package. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Designed specifically for digital switching applications where very low on resistance is mandatory.
- Manufactured using Process 58 technology.
Applications
- Digital switching circuits
- Low on-resistance signal routing
Procurement Notes
Verify component authenticity by checking manufacturer markings against datasheet specifications. Confirm package type matches design requirements, as thermal characteristics differ between TO-92 and SuperSOT-3 variants. Ensure sourcing channels provide valid traceability documentation for quality assurance purposes.
Selection Notes
Select the J108 when low drain-source on resistance is critical for the application. Compare zero-gate voltage drain current requirements against the 80 mA specification. Evaluate thermal management needs based on the selected package's power dissipation rating and ambient operating temperature constraints.
Part Context
The J108 belongs to a family of N-channel JFETs that includes the J109, J110, and MMBFJ108. These components share similar structural designs but vary in specific electrical thresholds such as gate cutoff voltage and drain current. The J108 represents the variant with higher drain current capability compared to other members of this series.
Replacement Considerations
Direct substitutes within the same family include the J109 and J110, though their electrical characteristics differ significantly. The MMBFJ108 offers equivalent functionality in a surface-mount SuperSOT-3 package. Verify pinout compatibility and parameter alignment before substitution.
